Structure and luminescence of Ca2Si5N8:Eu2+ phosphor for warm white light-emitting diodes

Chin. Phys. B., 2009,18, 8, 3555.

We have synthesized Ca2Si5N8:Eu2+ phosphor through a solid-state reaction and investigated its structural and luminescent properties. Our Rietveld refinement of the crystal structure of Ca1.9Eu0.1Si5N8 reveals that Eu atoms substituting for Ca atoms occupy two crystallographic positions. Between 10 K and 300 K, Ca2Si5N8:Eu2+ phosphor shows a broad red emission band centred at ~1.97 eV–2.01 eV. The gravity centre of the excitation band is located at 3.0 eV–3.31 eV. The centroid shift of the 5d levels of Eu2+ is determined to be ~1.17 eV, and the red-shift of the lowest absorption band to be ~0.54 eV due to the crystal field splitting. We have analysed the temperature dependence of PL by using a configuration coordinate model. The Huang–Rhys parameter S = 6.0, the phonon energy hv = 52 m eV, and the Stokes shift ΔS = 0.57 eV are obtained. The emission intensity maximum occurring at ~200 K can be explained by a trapping effect. Both photoluminescence (PL) emission intensity and decay time decrease with temperature increasing beyond 200 K due to the non-radiative process.